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2SC5081
Silicon NPN Epitaxial
REJ03G0743-0300 (Previous ADE-208-1133A) Rev.3.00 Aug.10.2005
Application
VHF / UHF wide band amplifier
Features
* High gain bandwidth product fT = 13.5 GHz Typ * High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 4 1
1. Collector 2. Emitter 3. Base 4. Emitter
Note:
Marking is "ZD-".
Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor.
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 100 150 -55 to +150 Unit V V V mA mW C C
Rev.3.00 Aug 10, 2005 page 1 of 5
2SC5081
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 15 -- -- -- 50 -- 10.5 15 -- Typ -- -- -- -- 90 0.4 13.5 18 1.1 Max -- 1 1 10 160 0.75 -- -- 2.0 Unit V A mA A pF GHz dB dB Test conditions IC = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz
Rev.3.00 Aug 10, 2005 page 2 of 5
2SC5081
Main Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation PC (mW)
DC Current Transfer Ratio vs. Collector Current
200
DC Current Transfer Ratio hFE
120 100 80 60 40 20
VCE = 5V 160
120
80
40 0 0.1
0
50
100
150
1
10
100
Ambient Temperature Ta (C)
Collector Current IC (mA)
20
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product vs. Collector Current
Gain Bandwidth Product fT (GHz)
Collector Output Capacitance vs. Collector to Base Voltage
5 IE = 0 f = 1 MHz 2 1 0.5
16 VCE = 5V 12 VCE = 1V
8
4 0 1 2 5 10 20 50
0.2 0.1 0.1 0.2
0.5
1
2
5
10
20
Collector Current IC (mA)
Collector to Base Voltage VCB (V)
Power Gain vs. Collector Current
20 5 VCE = 5V f = 900 MHz
Noise Figure vs. Collector Current
Power Gain PG (dB)
16 f = 2 GHz 12
NF (dB)
VCE = 5V 4
8
Noise Figure
3
2
f = 2GHz
4 0 1 2 5 10 20 50
1 0 1 2
f = 900MHz 5 10 20 50
Collector Current IC (mA)
Collector Current IC (mA)
Rev.3.00 Aug 10, 2005 page 3 of 5
2SC5081
S21 Parameter vs. Collector Current S21 Parameter vs. Collector Current
|S 21 | 2 (dB)
|S 21 | (dB)
20 VCE = 1V 16 f = 1 GHz
20 VCE = 5V 16 f = 2 GHz 12 f = 1 GHz
S 21 parameter
8
S 21 parameter
20 50
12
f = 2 GHz
2
8
4 0 1 2 5 10
4 0 1 2 5 10 20 50
Collector Current
IC (mA)
Collector Current
IC (mA)
Rev.3.00 Aug 10, 2005 page 4 of 5
2SC5081
Package Dimensions
JEITA Package Code SC-82A RENESAS Code PTSP0004ZA-A Package Name CMPAK-4(T) / CMPAK-4(T)V MASS[Typ.] 0.006g
D e2 b1 B B e
A Q c
E
HE LP L
Reference Symbol Dimension in Millimeters
A xM
A S A b
L1
A3 e2 e
A2
A
l1
yS b b2 c c1 c A-A Section
A1 S b1 b3 c1 l1
b5
e1
A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q
Min 0.8 0 0.8 0.25 0.35
Nom
0.1 1.8 1.15
1.8 0.3 0.1 0.2
0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1
Max 1.1 0.1 1.0 0.4 0.5
0.15 2.2 1.35
b4 B-B Section Pattern of terminal position areas
2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 0.9
1.5 0.2
Ordering Information
Part Name 2SC5081ZD-TL-E Quantity 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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